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Power Transistors
2SB0928, 2SB0928A (2SB928, 2SB928A)
Silicon PNP epitaxial planar type
For power amplification For TV vartical deflection output Complementary to 2SD1250 and 2SD1250A
8.50.2 6.00.5 3.40.3
Unit: mm
1.00.1
10.00.3
1.50.1
10.5min.
q q q
High collector to emitter VCEO High collector power dissipation PC N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25C)
Ratings -200 -150 -180 -6 -3 -2 30 1.3 150 -55 to +150 Unit V
2.0
s Features
1.5max.
1.1max.
0.80.1
0.5max.
2.540.3 5.080.5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB0928 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter N Type Package Unit: mm
3.40.3 1.00.1
8.50.2 6.00.3
1.5-0.4
Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature
V
2.0
3.0-0.2
A A
4.40.5
0.80.1 2.540.3
R0.5 R0.5 1.1 max.
0 to 0.4
5.080.5
W C C
1 2 3
1:Base 2:Collector 3:Emitter N Type Package (DS)
s Electrical Characteristics
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage Collector to emitter voltage 2SB0928 2SB0928A
(TC=25C)
Symbol ICBO IEBO VCBO VCEO VEBO hFE1 hFE2 VBE VCE(sat) fT
*
Conditions VCB = -200V, IE = 0 VEB = -4V, IC = 0 IC = -500A, IE = 0 IC = -5mA, IB = 0 IE = -500A, IC = 0 VCE = -10V, IC = -150mA VCE = -10V, IC = -400mA VCE = -10V, IC = -400mA IC = -500mA, IB = -50mA VCE = -10V, IC = - 0.5A, f = 10MHz
min
typ
max -50 -50
4.40.5
Unit A A V V V
-200 -150 -180 -6 60 50 -1 -1 30 240
Emitter to base voltage Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency
*h FE1
V V MHz
Rank classification
Q 60 to 140 P 100 to 240 Note)The part numbers in the parenthesis show conventional part number.
Rank hFE1
Note: Ordering can be made by the common rank (PQ rank hFE1 = 60 to 240) in the rank classification.
14.70.5
emitter voltage 2SB0928A
10.00.3
V
+0.4
+0
1
Power Transistor
PC -- Ta
40 -600 TC=25C (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (PC=1.3W)
2SB0928, 2SB0928A
IC -- VCE
-2.0 VCE=-10V
IC -- VBE
Collector power dissipation PC (W)
-500
IB=-4.5mA -4.0mA -3.5mA -3.0mA -2.5mA -2.0mA -1.5mA -1.0mA - 0.5mA
Collector current IC (A)
30
Collector current IC (A)
(1)
-1.6 25C -1.2 TC=100C
-400
20
-300
- 0.8 -25C
-200
10 (2) (3) 0 0 20 40 60 80 100 120 140 160
-100
- 0.4
0 0 -2 -4 -6 -8 -10 -12
0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base to emitter voltage VBE (V)
VCE(sat) -- IC
Collector to emitter saturation voltage VCE(sat) (V)
10000 -10 IC/IB=10
hFE -- IC
10000 VCE=-10V 3000 1000 300 100 30 10 3
fT -- IC
VCE=-10V f=10MHz TC=25C
Forward current transfer ratio hFE
-3
1000 300 100 -25C 30 10 3 1 - 0.01 - 0.03 - 0.1 - 0.3 TC=100C 25C
-1 TC=100C 25C -25C
- 0.3
- 0.1
- 0.03
- 0.01 - 0.01 - 0.03
Transition frequency fT (MHz)
-1 -3 -10
3000
- 0.1
- 0.3
-1
-3
1 - 0.01 - 0.03 - 0.1 - 0.3
-1
-3
-10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Area of safe operation (ASO)
-10 ICP IC -1 5ms 103 Non repetitive pulse TC=25C t=0.5ms 1ms
Rth(t) -- t
(1) Without heat sink (2) With a 50 x 50 x 2mm Al heat sink (1) (2) 10
-3
Thermal resistance Rth(t) (C/W)
Collector current IC (A)
102
- 0.3
300ms
1
- 0.1
- 0.03
2SB0928A
10-1
2SB0928
- 0.01 -1
-3
-10
-30
-100 -300 -1000
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Collector to emitter voltage VCE
(V)
Time t (s)
2
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2001 MAR

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